features trenchfet power mosfet 175 c maximum junction temperature 100% r g tested SUD50N03-07 product summary v ds (v) r ds(on) ( ) i d (a) 30 0.007 @ v gs = 10 v 20 30 0.010 @ v gs = 4.5 v 16 d g s n-channel mosfet to-252 s gd top view drain connected to tab ordering information: SUD50N03-07 SUD50N03-07?e3 ( lead free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current a t a = 25 c i d 20 continuous drain current a t a = 100 c i d 14 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 20 maximum power dissipation t c = 25 c p d 136 w maximum power dissipation t a = 25 c p d 5 a w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a r thja 30 c/w maximum junction-to-case r thjc 0.85 1.1 c/w notes a. surface mounted on fr4 board, t 10 sec. n-channel 30 v (d-s) 175 c mosfet www.freescale.net.cn 1 / 5 features trenchfet power mosfet 175 c maximum junction temperature 100% r g tested SUD50N03-07 vishay siliconix document number: 70767 s-40272?rev. e, 23-feb-04 www.vishay.com 1 n-channel 30-v (d-s) 175 c mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.007 @ v gs = 10 v 20 30 0.010 @ v gs = 4.5 v 16 d g s n-channel mosfet to-252 s gd top view drain connected to tab ordering information: SUD50N03-07 SUD50N03-07?e3 ( lead free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current a t a = 25 c i d 20 continuous drain current a t a = 100 c i d 14 a pulsed drain current i dm 100 a continuous source current (diode conduction) a i s 20 maximum power dissipation t c = 25 c p d 136 w maximum power dissipation t a = 25 c p d 5 a w operating junction and storage temperature range t j , t stg ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient a r thja 30 c/w maximum junction-to-case r thjc 0.85 1.1 c/w notes a. surface mounted on fr4 board, t 10 sec.
specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d =20 a 0.007 drain-source on-state resistance b r ds(on) v gs = 10 v, i d =20 a, t j = 125 c 0.011 ds(on) v gs = 4.5 v, i d = 20 a 0.010 forward transconductance b g fs v ds = 15 v, i d = 20 a 20 s dynamic a input capacitance c iss 5600 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf reverse transfer capacitance c rss 450 total gate charge c q g 70 130 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 50 a 16 nc gate-drain charge c q gd ds , gs , d 10 gate resistance r g 0.5 3.1 turn-on delay time c t d(on) 14 30 rise time c t r v dd = 15 v, r l = 0.3 11 20 ns turn-off delay time c t d(off) v dd = 15 v , r l = 0 . 3 i d 50 a, v gen = 10 v, r g = 2.5 60 120 ns fall time c t f 15 40 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 55 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. www.freescale.net.cn 2 / 5 SUD50N03-07 n-channel 30 v (d-s) 175 c mosfet SUD50N03-07 vishay siliconix www.vishay.com 2 document number: 70767 s-40272?rev. e, 23-feb-04 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 30 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.0 2.0 3.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 125 c 50 a on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 50 a v gs = 10 v, i d =20 a 0.007 drain-source on-state resistance b r ds(on) v gs = 10 v, i d =20 a, t j = 125 c 0.011 ds(on) v gs = 4.5 v, i d = 20 a 0.010 forward transconductance b g fs v ds = 15 v, i d = 20 a 20 s dynamic a input capacitance c iss 5600 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1100 pf reverse transfer capacitance c rss 450 total gate charge c q g 70 130 gate-source charge c q gs v ds = 15 v, v gs = 10 v, i d = 50 a 16 nc gate-drain charge c q gd ds , gs , d 10 gate resistance r g 0.5 3.1 turn-on delay time c t d(on) 14 30 rise time c t r v dd = 15 v, r l = 0.3 11 20 ns turn-off delay time c t d(off) v dd = 15 v , r l = 0 . 3 i d 50 a, v gen = 10 v, r g = 2.5 60 120 ns fall time c t f 15 40 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 100 a diode forward voltage b v sd i f = 100 a, v gs = 0 v 1.2 1.5 v source-drain reverse recovery time t rr i f = 50 a, di/dt = 100 a/ s 55 100 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature.
typical characteristics (25 c unless noted) 0 50 100 150 200 250 0246810 0 4 8 12 16 20 0 306090120 0.0000 0.0025 0.0050 0.0075 0.0100 0.0125 0.0150 0 20406080100 0 20 40 60 80 100 012345 0 30 60 90 120 0 1020304050 0 2000 4000 6000 8000 0 5 10 15 20 25 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 25 c ? 55 c 5 v t c = 125 c v ds = 15 v i d = 45 a v gs = 10, 9, 8, 7, 6 v v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c 3 v c iss i d ? drain current (a) 4 v www.freescale.net.cn 3 / 5 SUD50N03-07 n-channel 30 v (d-s) 175 c mosfet SUD50N03-07 vishay siliconix document number: 70767 s-40272?rev. e, 23-feb-04 www.vishay.com 3 typical characteristics (25 c unless noted) 0 50 100 150 200 250 0246810 0 4 8 12 16 20 0 306090120 0.0000 0.0025 0.0050 0.0075 0.0100 0.0125 0.0150 0 20406080100 0 20 40 60 80 100 012345 0 30 60 90 120 0 1020304050 0 2000 4000 6000 8000 0 5 10 15 20 25 30 output characteristics transfer characteristics capacitance gate charge transconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 25 c ? 55 c 5 v t c = 125 c v ds = 15 v i d = 45 a v gs = 10, 9, 8, 7, 6 v v gs = 10 v v gs = 4.5 v c rss t c = ? 55 c 25 c 125 c 3 v c iss i d ? drain current (a) 4 v
typical characteristics (25 c unless noted) 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 45 a t j = 25 c t j = 150 c 0 r ds(on) ? on-resiistance (normalized) thermal ratings 0 4 8 12 16 20 24 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt t emperature t a ? ambient t emperature ( c) ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 500 100 www.freescale.net.cn 4 / 5 SUD50N03-07 n-channel 30 v (d-s) 175 c mosfet SUD50N03-07 vishay siliconix www.vishay.com 4 document number: 70767 s-40272?rev. e, 23-feb-04 typical characteristics (25 c unless noted) 0.0 0.5 1.0 1.5 2.0 2.5 ? 50 ? 25 0 25 50 75 100 125 150 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 1 0.3 0.6 0.9 1.2 1.5 v gs = 10 v i d = 45 a t j = 25 c t j = 150 c 0 r ds(on) ? on-resiistance (normalized) thermal ratings 0 4 8 12 16 20 24 0 25 50 75 100 125 150 175 safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 500 10 0.1 0.1 1 10 100 limited by r ds(on) 1 100 t a = 25 c single pulse normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 110 normalized effective transient thermal impedance maximum drain current vs. ambiemt t emperature t a ? ambient t emperature ( c) ? drain current (a) i d 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1 ms 10 ms 100 ms dc 10, 100 s 1 s 500 100
www.freescale.net.cn 5 / 5 disclaimer material category policy all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. freestyle intertechnology, inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, ?freestyle?), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on freestyle?s knowledge of typical requirements that are often placed on freestyle products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer?s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customer?s technical experts. product specifications do not expand or otherwise modify freestyle?s terms and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay freestyle intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the european parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some freestyle documentation may still make reference to rohs directive 2002/95/ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. SUD50N03-07 n-channel 30 v (d-s) 175 c mosfet legal disclaimer notice vishay document number: 91000 www.vishay.com revision: 08-apr-05 1 notice specifications of the products displayed herein are subjec t to change without notice. vishay intertechnology, inc., or anyone on its behalf, assume s no responsibility or liability fo r any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. except as provided in vishay's terms and conditions of sale for such products, vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and /or use of vishay products including liab ility or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyrigh t, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify vishay for any damages resulting from such improper use or sale.
|
